DocumentCode :
1295570
Title :
Analytical expressions for the calculation of pixel detector capacitances
Author :
Cerdeira, Antonio ; Estrada, Magali
Author_Institution :
Dept. of Electr. Eng., Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City, Mexico
Volume :
44
Issue :
1
fYear :
1997
fDate :
2/1/1997 12:00:00 AM
Firstpage :
63
Lastpage :
66
Abstract :
In this paper, analytical expressions for calculating the capacitance of an isolated pixel diode as well as a pixel diode in an array are presented. These expressions fit the three-dimensional numerical solution of the Laplace equation better than 10% as previously calculated for these diodes, covering most practical cases. The total pixel capacitance Cp is obtained by a simple substitution of parameters in the analytical expressions. In addition, a simple method to obtain the real diode capacitance, the parasitic capacitance, and the substrate concentration is proposed on the basis of the analytical equation for the capacitance for an isolated diode. The coincidence of measured and calculated data for the capacitance is shown. The procedures presented permit a very precise description of the real C-V curve for an isolated diode as well as for diodes in a pixel array, allowing the design of the best coupling between each pixel and its corresponding readout preamplifier with a minimum calculation effort
Keywords :
capacitance; detector circuits; nuclear electronics; silicon radiation detectors; Laplace equation; analytical expressions; isolated pixel diode; parasitic capacitance; pixel detector capacitances; readout preamplifier; real C-V curve; substrate concentration; total pixel capacitance; Capacitance measurement; Conductivity; Laplace equations; P-i-n diodes; Parasitic capacitance; Preamplifiers; Radiation detectors; Sensor arrays; Silicon; X-ray detection;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.554825
Filename :
554825
Link To Document :
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