Title :
A Novel SONOS Gate Power MOSFET With Excellent UIS Capability
Author :
Xianda Zhou ; Ng, J.C.W. ; Sin, Johnny K. O.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.
Keywords :
power MOSFET; semiconductor doping; silicon compounds; SONOS gate power MOSFET; Si3N4; UIS capability; avalanche energy absorption; doping concentration; heavily doped p-body; oxide-nitride-oxide gate dielectric; positive fixed charge; silicon-oxide-nitride-oxide-silicon gate power MOSFET; threshold voltage positive shift; undamped inductive switching capability; Logic gates; Power MOSFET; SONOS devices; Silicon; Temperature measurement; Threshold voltage; Avalanche energy; power MOSFET; silicon–oxide–nitride–oxide–silicon (SONOS); threshold voltage; unclamped inductive switching (UIS);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2158059
