Title :
One-Shadow-Mask Self-Assembled Ultralow-Voltage Coplanar Homojunction Thin-Film Transistors
Author :
Lu, Aixia ; Sun, Jia ; Jiang, Jie ; Wan, Qing
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng., Chinese Acad. of Sci., Ningbo, China
Abstract :
A self-assembling diffraction method is developed for low-voltage coplanar homojunction thin-film transistor (TFT) fabrication. In this one-shadow-mask process, a channel layer can be simultaneously self-assembled between indium-tin-oxide (ITO) source/drain electrodes during magnetron sputtering deposition. When a microporous SiO2-based solid electrolyte is used as the gate dielectric, full-depletion-mode ITO TFTs show an ultralow operation voltage of 1.5 V due to the large specific capacitance (4.44 μF/cm2). A small subthreshold swing of 0.12 V/decade and a large on/off ratio of 106 are obtained. Our results demonstrate that such a simple one-mask self-assembling method is promising for low-cost TFT fabrication.
Keywords :
indium compounds; sputter deposition; thin film transistors; tin compounds; ITO; SiO2; channel layer; gate dielectric; indium-tin-oxide source-drain electrodes; low-voltage coplanar homojunction thin-film transistor fabrication; magnetron sputtering deposition; one-shadow-mask process; self-assembling diffraction method; solid electrolyte; voltage 0.12 V; voltage 1.5 V; Capacitance; Conductivity; Dielectrics; Diffraction; Electrodes; Fabrication; Indium tin oxide; Logic gates; Solids; Sputtering; Thin film transistors; Voltage; Coplanar homojunction; low-voltage transistors; self-assembled channel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2061834
