Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer

In this letter, the strained In_0.22Ga_0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (alpha_i) and the transparency current density (J_tr) were 1.78 cm^-1 and 40.2 A/cm², respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the alpha_i and J_tr could be reduced to 0.63 cm^-1 and 39.1 A/cm², respectively. To the best of our knowledge, the J_tr was the lowest among the reported InGaAs lasers around 1060 nm.