Title :
Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode
Author :
Cho, Heung-Jae ; Son, Younghwan ; Oh, Byoungchan ; Lee, Sanghoon ; Lee, Jong-Ho ; Park, Byung-Gook ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
The random telegraph noise in a gate leakage current in an accumulation mode has been studied to characterize slow oxide traps at nMOSFET devices having a TiN/HfO2/SiO2 gate stack. New equations for the trap´s vertical location and energy level were derived by means of the relation between the trap´s energy and Fermi levels in the accumulation mode. Through our analysis in both the accumulation and inversion modes, we found that the measurement in the accumulation mode is complementary to that in the inversion mode in order to assess the traps within a wide range of energy levels.
Keywords :
Fermi level; MOSFET; hafnium compounds; high-k dielectric thin films; leakage currents; random noise; semiconductor device noise; silicon compounds; titanium compounds; Fermi levels; MOSFET; TiN-HfO2-SiO2; accumulation mode; energy level; gate leakage current; high-k gate dielectric stack; inversion mode; oxide traps; random telegraph noise; Dielectric measurements; Dielectrics; Energy states; Equations; High K dielectric materials; High-K gate dielectrics; Leakage current; Logic gates; Low-frequency noise; MOSFETs; Noise; Noise level; Semiconductor device noise; Silicon; Telegraphy; $I_{g}$ random telegraph noise (RTN); Accumulation mode; metal/high-k gate dielectric stack; random telegraph noise (RTN); slow oxide trap; trap location; trap\´s energy level;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2057251
