Application of MOSFET´s in the temperature compensation of DC amplifiers

Author

Rizkalla, Maher E. ; Hanna, Nabil N.

Author_Institution

Dept. of Electr. Eng., Purdue Univ., Indianapolis, IN, USA

Issue

1

fYear

1987

fDate

3/1/1987 12:00:00 AM

Firstpage

77

Lastpage

82

Abstract

A new application of metal oxide silicon field-effect transistor (MOSFET) devices is presented for solving the problem of drift in the characteristics of DC amplifiers under the effect of temperature variations in the range of 20-75°C. Expressions for the bias voltages and drain currents for operation at zero temperature coefficient for linear and nonlinear devices were derived. The validity of the derived expressions was checked experimentally for various samples of MOSFETs. These expressions were used to design the MOSFET stage to compensate for the drift of the DC amplifier. The amplifier has proved to be very reliable and can be adjusted for practically zero drift over a narrow band of temperatures. The drift was about 40 μV/°C over the range of 20-75°C and about 10 μV/°C over the range of 50-70°C. The 3-dB point in the frequency response is about 1.7 MHz. The overall gain is about 750 and the amplifier is capable of supplying a peak-to-peak output voltage of 3.0 V.

Keywords

DC amplifiers; compensation; insulated gate field effect transistors; 20 to 75 degC; 3 V; 50 to 70 degC; DC amplifiers; MOSFET; bias voltages; drain currents; drift; linear devices; nonlinear devices; output voltage of 3.0 V; temperature compensation; temperature variations; zero temperature coefficient; Current measurement; Equations; Logic gates; MOSFET circuits; Temperature distribution; Temperature measurement;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.1987.6312634

Filename

6312634