DocumentCode :
1296392
Title :
The frequency response of a fractal photolithographic structure
Author :
Haba, T. Cisse ; Ablart, G. ; Camps, T.
Author_Institution :
Univ. Paul Sabatier, Toulouse, France
Volume :
4
Issue :
3
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
321
Lastpage :
326
Abstract :
The interest in fractal materials structure in recent years paved the way for the study of the electrical behavior of metallic samples having `fractal tree´ patterns. The unique characteristics of these structures, such as the self-similarity and the fractional dimension D f, endow these materials with specific physical properties. The simulations and the measurements performed give evidence for the impedance of such a structure, a frequency response closely correlated with the sample structure itself and the so-called constant phase angle behavior of its phase. Indeed, during the characterization of the fractal sample in frequency, it is found that the real and the imaginary parts of the impedance obey the same law of variation beyond a certain frequency. This factor leads us to the relation (Ze)/(Ze )=tan (θ)=constant
Keywords :
MIS devices; MIS structures; electric impedance; fractals; frequency response; photolithography; 20 Hz to 1 MHz; MOS technology; Si-SiO2; constant phase angle behavior; fractal photolithographic structure; fractal tree patterns; fractional dimension; frequency response; metallic samples; self-similarity; Conducting materials; Dielectric materials; Fractals; Frequency response; Impedance measurement; Inorganic materials; MOS devices; Performance evaluation; Phase measurement; Semiconductor materials;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/94.598289
Filename :
598289
Link To Document :
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