Title :
ZnSe/ZnCdSeTe Superlattice Nanotips
Author :
Chang, J. ; Hsiao, C.H. ; Hung, S.C. ; Chih, S.H. ; Wang, S.B. ; Cheng, Y.C. ; Huang, B.R. ; Chang, S.P. ; Young, S.J.
Author_Institution :
Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2011 12:00:00 AM
Abstract :
The authors report the growth of quaternary ZnCdSeTe nanotips and ZnSe/ZnCdSeTe superlattice nanotips on oxidized Si(1 0 0) substrate. It was found that the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnCdSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnCdSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnCdSeTe superlattice nanotips with well widths of 12, 16, 20, and 24 nm were 189, 205, 292, and 240 meV, respectively.
Keywords :
II-VI semiconductors; cadmium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; photoluminescence; selenium compounds; semiconductor growth; semiconductor superlattices; zinc compounds; Si; ZnSe-ZnCdSeTe; activation energy; cubic zinc-blende structures; hexagonal wurtzite structure; molecular beam epitaxy; oxidized Si(100) substrate; photoluminescence intensity; quaternary superlattice nanotip growth; Excitons; II-VI semiconductor materials; Materials science and technology; Photoluminescence; Photonic band gap; Semiconductor materials; Semiconductor superlattices; Tellurium; Zinc compounds; Zinc oxide; Molecular beam epitaxy (MBE) quaternary ZnCdSeTe; ZnSe/ZnCdSeTe superlattice nanotips;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2066572
