DocumentCode :
1296450
Title :
The realization of the quantum Hall standard of resistance at the BIPM
Author :
Witt, Thomas J. ; Endo, Tadashi ; Reymann, Dominique
Author_Institution :
Bureau International des Poids et Mesures, F-92312 Sèvres Cedex, France
Issue :
2
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
234
Lastpage :
239
Abstract :
The first measurements of the quantum Hall resistance at the Bureau International des Poids et Mesures (BIPM) have been carried out using a silicon MOSFET sample at magnetic flux densities up to 13.2 T and at temperatures near 0.5 K. New measurement equipment has been constructed and used to establish an accurate link to the present resistance standard with a relative uncertainty, given as a one-standard-deviation estimate, of 7.6 × 10−8. The results are 4RH (4) = (25 812.8511 ± 0.0020) Ω69-BI for June 1, 1986. Using the very recently revised value for the relation between Ω69-BI and the Commonwealth Scientific and Industrial Research Organization (CSIRO) determinations of the ohm gives 4RH (4) = (25 812.8087 ± 0.0027) Ω.
Keywords :
Current measurement; Electrical resistance measurement; Resistance; Resistors; Standards; Temperature measurement; Uncertainty;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.1987.6312676
Filename :
6312676
Link To Document :
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