Title :
Correlation of Human Metal Model and Transmission Line Pulsing Testing
Author :
Malobabic, Slavica ; Salcedo, Javier A. ; Righter, Alan W. ; Hajjar, Jean-Jacques ; Liou, Juin J.
Author_Institution :
Dept. of EECS, Univ. of Central Florida, Orlando, FL, USA
Abstract :
Passing voltage levels measured from the human metal model tester are correlated with the failure current levels obtained from the transmission line pulsing (TLP) tester for electrostatic discharge protection devices fabricated in 0.18- and 0.35-μm MOS technologies. Various relevant TLP parameters, including the holding voltage and on -state resistance, are accounted for in the improved correlation formula developed in this study.
Keywords :
MIS devices; electrostatic discharge; semiconductor device testing; transmission lines; MOS technologies; TLP tester; electrostatic discharge protection devices; failure current levels; human metal model; passing voltage levels; size 0.18 mum; size 0.35 mum; transmission line pulsing tester; Correlation; Current measurement; Electrostatic discharge; Hidden Markov models; Testing; Transmission line measurements; Voltage measurement; Electrostatic discharge (ESD); human body model (HBM); human metal model (HMM); transmission line pulsing (TLP);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2160141
