DocumentCode :
1296758
Title :
Low-voltage fully differential switched current memory cell
Author :
Balachandran, G.K. ; Allen, P.E.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
35
Issue :
25
fYear :
1999
fDate :
12/9/1999 12:00:00 AM
Firstpage :
2200
Lastpage :
2201
Abstract :
A fully differential switched-current (SI) memory cell with a new common-mode feedback technique is presented. The cell achieves a lower voltage of operation (Vdd,min=Vt+3Vds,sat ) than that (Vdd,min=2Vt+4Vds,sat) of its conventional counterpart, by using a new common-mode current sensing technique
Keywords :
circuit feedback; integrated memory circuits; low-power electronics; switched current circuits; common-mode feedback; current sensing; low-voltage fully differential switched current memory cell;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991490
Filename :
820298
Link To Document :
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