Title :
High-frequency response limitation of high performance InAlGaAs/InAlAs superlattice avalanche photodiodes
Author :
Makita, K. ; Nakata, T. ; Watanabe, I. ; Taguchi, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
12/9/1999 12:00:00 AM
Abstract :
InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APDs) have been investigated for use in high bit rate optical communication systems. The high frequency response limitation of high-performance InAlGaAs/InAlAs SL-APDs is reported. For a thin avalanche layer of 0.126 μm, a gain bandwidth product of 200 GHz and a multiplied dark current of 700 nA have been attained. These values are sustainable for use in practical systems at 20 Gbit/s
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; semiconductor superlattices; 0.126 mum; 20 Gbit/s; 700 nA; InAlGaAs-InAlAs; InAlGaAs-InAlAs superlattice avalanche photodiodes; gain bandwidth product; high bit rate optical communication systems; high frequency response limitation; high performance InAlGaAs/InAlAs superlattice avalanche photodiodes; high-frequency response limitation; multiplied dark current; thin avalanche layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991515
