High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

Author

Imhoff, E.A. ; Kub, Francis J. ; Hobart, Karl D. ; Ancona, Mario G. ; VanMil, B.L. ; Gaskill, D. Kurt ; Lew, K. ; Myers-Ward, Rachael L. ; Eddy, Charles R.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

58

Issue

10

fYear

2011

Firstpage

3395

Lastpage

3400

Abstract

A novel taper-doping anode termination method is introduced for high-voltage silicon carbide devices. The method employs a subresolution two-tone termination mask to achieve a gray-scale exposure and a smoothly tapered photoresist profile. Using the tapered profile as an implantation mask, self-aligned 6-kV SiC PiN diodes are demonstrated with 90% of the parallel-plate breakdown voltage. The avalanche breakdown for the design is controlled and reversible. This one-step technique allows wide design control over the width and shape of the termination profile and has wide device and material applicability.

Keywords

avalanche breakdown; masks; p-i-n diodes; photoresists; silicon compounds; wide band gap semiconductors; SiC; SiC PiN diodes; avalanche breakdown; gray-scale exposure; high-voltage 4H-SiC devices; implantation mask; parallel-plate breakdown voltage; silicon carbide; smoothly tapered junction termination extensions; smoothly tapered photoresist profile; subresolution two-tone termination mask; taper-doping anode termination; voltage 6 kV; Anodes; Boron; Electric breakdown; Gray-scale; Implants; Resists; Silicon carbide; Gray-scale photolithography; high voltage; junction termination extension (JTE); silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2160948

Filename

5983429