Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTs

Author

DasGupta, Sandeepan ; McMorrow, Dale ; Reed, Robert A. ; Schrimpf, Ronald D. ; Boos, J. Brad

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

Volume

57

Issue

4

fYear

2010

Firstpage

1856

Lastpage

1860

Abstract

Single event charge collection in AlSb/InAs HEMTs is shown to depend on the gate bias. Spatial correlation between excess channel carriers and the horizontal field is shown to be the key factor. Hole accumulation in the AlSb buffer layer increases the electron concentration in the two-dimensional electron gas, increasing the collected charge. Potential drop across access regions reduces charge collection towards zero gate bias. A secondary but perceptible dependence on high field electron mobility is demonstrated.

Keywords

aluminium compounds; high electron mobility transistors; indium compounds; radiation effects; AlSb-InAs; AlSb/InAs HEMT; electron concentration; excess channel carriers; gate bias dependence; high field electron mobility; single event charge collection; spatial correlation; two-dimensional electron gas; Charge carrier density; Charge carrier processes; Charge measurement; Current measurement; Electric potential; Electron mobility; HEMTs; III-V semiconductor materials; Indium compounds; Laboratories; Logic gates; MODFETs; Mathematical model; Transient analysis; Voltage; AlSb/InAs; HEMT; TCAD; charge collection; single event;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2039806

Filename

5550302