Title :
Numerical Simulation of Feature Profile Evolution Using FPS-3D
Author_Institution :
Tokyo Electron US Holdings, Inc., Billerica, MA, USA
Abstract :
A reliable and predictive feature profile evolution simulator could be a very important tool for the nanotechnology and semiconductor industry. It would allow significant saving of time and resources otherwise spent on design experiments to find proper chemistries and conditions in a multidimensional parameter space in search for advanced etching and deposition. A recently developed general feature profile simulator (FPS-3D) optimized for computational speed, reliability, and graphics capability is discussed, and a couple of images from simulations are presented.
Keywords :
nanoelectronics; numerical analysis; plasma deposition; semiconductor industry; sputter etching; FPS-3D; advanced etching; computational speed; deposition; design experiments; feature profile evolution simulator; graphic capability; multidimensional parameter space; nanotechnology; numerical simulation; reliability; semiconductor industry; Argon; Etching; Graphics; Plasmas; Semiconductor process modeling; Solid modeling; Numerical simulation; plasma materials processing; plasma simulation; semiconductor process modeling;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2011.2160364
