Effect of p-base sheet and contact resistances on static current-voltage characteristics of scaled low-voltage vertical power DMOSFETs

Author

Shenai, Krishna

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

270

Lastpage

272

Abstract

Static current-voltage characteristics of low-voltage scaled power double-diffused MOSFETs fabricated using selectively formed TiSi/sub 2/ films on gate polysilicon and source contact regions are reported. It is shown that considerable modulation of drain-source current-voltage characteristics results from increased p-base sheet and contact resistances. This effect is found to vanish at higher operating temperatures. Increased p-base contact resistance also results in a large forward voltage drop for the body p-n junction diode.<>

Keywords

insulated gate field effect transistors; metallisation; power transistors; semiconductor-metal boundaries; titanium compounds; I/V characteristics modulation; Si-TiSi/sub 2/ contacts; body p-n junction diode; drain-source current-voltage characteristics; forward voltage drop; gate polysilicon; higher operating temperatures; low-voltage scaled DMOSFET; p-base contact resistance; p-base sheet resistance; polycrystalline Si; scaled power double-diffused MOSFETs; selectively formed TiSi/sub 2/ films; source contact regions; static current-voltage characteristics; vertical power DMOSFETs; Contact resistance; Current-voltage characteristics; Immune system; MOSFET circuits; Metallization; Power MOSFET; Silicides; Silicon; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82057

Filename

82057