Direct-Schottky-contact InP MESFET

Author

Abid, Z. ; Gopinath, A. ; Williamson, F. ; Nathan, M.I.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

279

Lastpage

280

Abstract

The design and fabrication of an InP MESFET with excellent I-V characteristics are reported. A record high transconductance of 110 mS/mm was measured for a 1- mu m gate length direct-Schottky-contact InP MESFET, where the InP surface was not passivated or treated prior to the deposition of the gate contact. Microwave measurements show an f/sub max/ of 11.6 GHz for this typical nominal 1- mu m gate length device. A p-type planar doped layer was inserted between the buried n-type channel and the device surface at 18 nm from the gate metal. This planar layer enhances the Schottky barrier height and device performance.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; indium compounds; semiconductor-metal boundaries; solid-state microwave devices; 1 micron; 11.6 GHz; I-V characteristics; InP; InP MESFET; MESFETs; Schottky barrier height; design; device performance; direct-Schottky-contact; fabrication; p-type planar doped layer; semiconductors; transconductance; Breakdown voltage; Buffer layers; Fabrication; Indium phosphide; Insulation; Length measurement; MESFETs; Microwave devices; Surface treatment; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82060

Filename

82060