OMCVD-grown In/sub 0.4/Al/sub 0.6/As/InP quantum-well HEMT

Author

Hong, Won-P ; Bhat, Rajaram ; DeRosa, F. ; Hayes, John R. ; Chang, Gee-Kung

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

284

Lastpage

286

Abstract

The transport properties and device characteristics of pseudomorphic In/sub 0.4/Al/sub 0.6/As/InP modulation-doped heterostructures are investigated. The existence of a two-dimensional electron gas at the heterojunction was confirmed by Shubnikov-de Haas measurements. A high electron mobility transistor (HEMT) having a gate length of 1.5 mu m showed extrinsic transconductances and drain current densities as high as 160 mS/mm and 300 mA/mm, respectively. The HEMT also showed a very small output conductance of less than 2 mS/mm and high gate-drain breakdown voltage of larger than 15 V. These results show the great potential of this HEMT for high-voltage gain and high-power microwave applications.<>

Keywords

III-V semiconductors; chemical vapour deposition; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor quantum wells; vapour phase epitaxial growth; 15 V; In/sub 0.4/Al/sub 0.6/As-InP; MODFET; OMCVD-grown; Shubnikov-de Haas measurements; device characteristics; drain current densities; extrinsic transconductances; gate length; gate-drain breakdown voltage; high electron mobility transistor; modulation-doped heterostructures; pseudomorphic HEMT; quantum-well HEMT; semiconductors; small output conductance; transport properties; two-dimensional electron gas; FETs; Gold; HEMTs; Hydrogen; Indium compounds; Indium phosphide; Magnetic field measurement; Quantum well devices; Quantum wells; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82062

Filename

82062