Title :
A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling
Author :
Roche, Philippe ; Gasiot, Gilles ; Uznanski, Slawosz ; Daveau, Jean-Marc ; Torras-Flaquer, Josep ; Clerc, Sylvain ; Harboe-Sorensen, Reno
Author_Institution :
Central CAD & Design Solutions, STMicroelectronics, Crolles, France
Abstract :
This paper presents new experimental and modeling evidences that advanced commercial CMOS technologies get intrinsically harder against space radiations with technology downscaling. A 65 nm commercial bulk CMOS process can deliver improved radiation-tolerance without sacrificing electrical performance.
Keywords :
CMOS integrated circuits; gamma-ray effects; ion beam effects; proton effects; radiation hardening (electronics); CMOS technology; electronic circuits; gamma test results; heavy ion test results; proton test results; radiation hardening; radiation-tolerance; space radiations; CMOS integrated circuits; CMOS technology; Circuit simulation; Circuit testing; Flip-flops; Libraries; Neutrons; Paper technology; Protons; Radiation hardening; Random access memory; Semiconductor device modeling; Single event upset; Space technology; Temperature measurement; CMOS; electronic circuits; radiation hardening; space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2041790
