Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs

Author

Wang, Janet ; Kistler, Neal ; Woo, Jason ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

300

Lastpage

302

Abstract

A threshold voltage instability phenomenon at low temperatures in partially depleted thin-film silicon-on-insulator (SOI) SIMOX (separation by implantation of oxygen) MOSFETs is reported. This phenomenon was investigated under normal MOSFET operating conditions for temperatures ranging from 300 K down to 10 K, with both the magnitude and duration of the instability observed to be strongly dependent on temperature. Threshold voltage shifts as small as 0 V at room temperature and as large as 0.29 V at 10 K are reported. The duration of the instability ranged in the tens of minutes and was observed to increase as the temperature was decreased.<>

Keywords

electron device noise; insulated gate field effect transistors; semiconductor-insulator boundaries; stability; 300 to 10 K; SIMOX; Si-SiO/sub 2/; instability duration; instability magnitude; low temperature operation; low temperatures; partially depleted thin-film SOI MOSFETs; room temperature; separation by implantation of oxygen; temperatures; threshold voltage instability phenomenon; Electron devices; MOSFETs; Semiconductor films; Silicon; Temperature dependence; Temperature distribution; Thermal stresses; Thin film devices; Threshold voltage; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82067

Filename

82067