Title :
Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics
Author :
Sturm, J.C. ; Prinz, E.J. ; Magee, C.W.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
Graded-base and uniform-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition. The temperature dependences of the collector currents are shown to obey a simple analytical model of an effective Gummel number. The model can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11000 have been observed at 133 K.<>
Keywords :
Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; semiconductor device models; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; semiconductor materials; vapour phase epitaxial growth; 133 K; RTCVD; Si-Si/sub 1-x/Ge/sub x/-Si; arbitrary base profiles; base currents; collector currents; current gains; effective Gummel number; graded base HBTs; heterojunction bipolar transistors; model; narrow bandgap base; near-ideal electrical characteristics; rapid thermal CVD; rapid thermal chemical vapor deposition; temperature dependences; uniform base HBTs; Channel hot electron injection; Chemical vapor deposition; Electric variables; Fabrication; Heterojunction bipolar transistors; Inductors; Infrared heating; Molecular beam epitaxial growth; Out of order; Temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
