Title :
Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors
Author :
Mattiazzo, Serena ; Battaglia, Marco ; Bisello, Dario ; Contarato, Devis ; Denes, Peter ; Giubilato, Piero ; Pantano, Devis ; Pozzobon, Nicola ; Tessaro, Mario ; Wyss, Jeffery
Author_Institution :
Dipt. di Fis., Univ. degli Studi di Padova, Padova, Italy
Abstract :
Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology have been developed and characterized. This summary presents the first assessments of the total dose effect from ionizing radiation performed on such detectors. This work, performed on single transistor test structures, shows how the substrate bias condition during irradiation plays a dramatic role on the resulting radiation damage.
Keywords :
dosimetry; monolithic integrated circuits; radiation effects; semiconductor counters; silicon-on-insulator; FD-SOI Technology; deep-submicron fully depleted silicon-on-insulator; ionizing radiation; monolithic pixel detectors; radiation damage; total dose effects; CMOS technology; Integrated circuit technology; Ionizing radiation; Laboratories; Leakage current; Logic gates; MOSFETs; Physics; Pixel; Radiation detectors; Radiation effects; Sensor phenomena and characterization; Silicon on insulator technology; Spontaneous emission; Substrates; Voltage; Active pixel sensors; radiation effects; silicon on insulator technology; silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2038378
