Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors

Author

Mattiazzo, Serena ; Battaglia, Marco ; Bisello, Dario ; Contarato, Devis ; Denes, Peter ; Giubilato, Piero ; Pantano, Devis ; Pozzobon, Nicola ; Tessaro, Mario ; Wyss, Jeffery

Author_Institution

Dipt. di Fis., Univ. degli Studi di Padova, Padova, Italy

Volume

57

Issue

4

fYear

2010

Firstpage

2135

Lastpage

2141

Abstract

Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology have been developed and characterized. This summary presents the first assessments of the total dose effect from ionizing radiation performed on such detectors. This work, performed on single transistor test structures, shows how the substrate bias condition during irradiation plays a dramatic role on the resulting radiation damage.

Keywords

dosimetry; monolithic integrated circuits; radiation effects; semiconductor counters; silicon-on-insulator; FD-SOI Technology; deep-submicron fully depleted silicon-on-insulator; ionizing radiation; monolithic pixel detectors; radiation damage; total dose effects; CMOS technology; Integrated circuit technology; Ionizing radiation; Laboratories; Leakage current; Logic gates; MOSFETs; Physics; Pixel; Radiation detectors; Radiation effects; Sensor phenomena and characterization; Silicon on insulator technology; Spontaneous emission; Substrates; Voltage; Active pixel sensors; radiation effects; silicon on insulator technology; silicon radiation detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2038378

Filename

5550325