High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator

Author

Chen, Chang-Lee ; Smith, Frank W. ; Clifton, Brian J. ; Mahoney, Leonard J. ; Manfra, Michael J. ; Calawa, Arthur R.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

306

Lastpage

308

Abstract

A GaAs layer grown by molecular beam epitaxy at 200 degrees C is used as the gate insulator for GaAs MISFETs. The gate reverse breakdown and forward turn-on voltages, are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel. It is shown that a reverse bias of 42 V or forward bias of 9,3 V is needed to reach a gate current of 1 mA/mm of gate width. A MISFET having a gate of 1.5*600 mu m delivers an output power of 940 mW (1.57-W/mm power density) with 4.4-dB gain and 27.3% power added efficiency at 1.1 GHz. This is the highest power density reported for GaAs-based FETs.<>

Keywords

III-V semiconductors; gallium arsenide; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor technology; solid-state microwave devices; 1.1 GHz; 1.5 micron; 200 C; 27.3 percent; 4.4 dB; 42 V; 600 micron; 9.3 V; 940 mW; GaAs MISFETs; MBE; SI GaAs layer; epitaxial GaAs gate insulator; forward bias; forward turn-on voltages; gain; gate current; gate reverse breakdown; high power density MISFETs; high-resistivity GaAs layer; low-temperature-grown epitaxial layer; microwave FETs; molecular beam epitaxy; output power; power added efficiency; reverse bias; semiconductors; Breakdown voltage; Epitaxial layers; FETs; Gallium arsenide; Insulation; MESFETs; MISFETs; Metal-insulator structures; Molecular beam epitaxial growth; Power generation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82069

Filename

82069