Title :
Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology
Author :
Artola, Laurent ; Hubert, G. ; Duzellier, S. ; Bezerra, Francoise
Author_Institution :
ONERA, Toulouse, France
Abstract :
TCAD simulations of a 90 nm CMOS bulk technology have been performed to investigate how technologies parameters impact on the collection charge leading to Single Event Effects. This work proposes an improved diffusion collection model.
Keywords :
CMOS integrated circuits; circuit simulation; ion beam effects; technology CAD (electronics); CMOS bulk technology; TCAD simulation; collected charge analysis; diffusion collection model; new transient model; single event effects; Aerospace electronics; Analytical models; Charge carrier density; Discrete event simulation; Doping; Doping profiles; Junctions; Neutrons; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Space technology; Substrates; Transient analysis; Charge collection; TCAD simulation; diffusion analytical model; heavy ion; single event effect;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2053944
