DocumentCode
1297315
Title
Low threshold current surface emitting AlGaAs/GaAs laser with 45° metallised reflector
Author
Shieh, C.L. ; Mantz, J. ; Alaui, K. ; Engelmann, R.W.H.
Author_Institution
Siemens Res. & Technol. Labs., Princetown, NJ
Volume
24
Issue
6
fYear
1988
fDate
3/17/1988 12:00:00 AM
Firstpage
343
Lastpage
344
Abstract
A surface emitting AlGaAs/GaAs DH laser having one etched facet integrated with a 45° metallised reflector is demonstrated with a threshold current as low as 70 mA for a 6 μm (gain-guided) shallow mesa stripe geometry. The etched facet/45° mirror combination was fabricated by tilted ion beam milling through the p -metallisation of the processed wafer. A surface emitter with power as high as 70 mW is achieved with a 50 μm stripe
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser cavity resonators; mirrors; semiconductor junction lasers; 45° metallised reflector; 70 mA; 70 mW; AlGaAs-GaAs; etched facet; etched facet/mirror combination; integrated optics; low threshold current; p-metallisation; semiconductor lasers; shallow mesa stripe geometry; surface emitting; tilted ion beam milling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8207
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