Title :
Low threshold current surface emitting AlGaAs/GaAs laser with 45° metallised reflector
Author :
Shieh, C.L. ; Mantz, J. ; Alaui, K. ; Engelmann, R.W.H.
Author_Institution :
Siemens Res. & Technol. Labs., Princetown, NJ
fDate :
3/17/1988 12:00:00 AM
Abstract :
A surface emitting AlGaAs/GaAs DH laser having one etched facet integrated with a 45° metallised reflector is demonstrated with a threshold current as low as 70 mA for a 6 μm (gain-guided) shallow mesa stripe geometry. The etched facet/45° mirror combination was fabricated by tilted ion beam milling through the p-metallisation of the processed wafer. A surface emitter with power as high as 70 mW is achieved with a 50 μm stripe
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser cavity resonators; mirrors; semiconductor junction lasers; 45° metallised reflector; 70 mA; 70 mW; AlGaAs-GaAs; etched facet; etched facet/mirror combination; integrated optics; low threshold current; p-metallisation; semiconductor lasers; shallow mesa stripe geometry; surface emitting; tilted ion beam milling;
Journal_Title :
Electronics Letters
