Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer

Author

Yoo, Byueng-Su ; Chu, Hye Yong ; Park, Hyo-Hoon ; Lee, Hae Gwon ; Lee, Jaejin

Author_Institution

Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

33

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1794

Lastpage

1800

Abstract

We report the transverse mode characteristics of InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSEL´s) buried in a low-temperature-deposited amorphous GaAs (a-GaAs) layer. The maximum current maintaining a stable fundamental transverse mode is increased by the antiguide effect of the a-GaAs clad with a high refractive index. For 10- and 15-μm-diameter devices, we attain a stable single-mode emission over a wide range of current. The antiguide effects and transverse mode profiles in vertical cavity lasers buried in the high refractive index clad are calculated using a two-dimensional beam propagation method

Keywords

III-V semiconductors; amorphous semiconductors; buried layers; claddings; finite difference methods; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; refractive index; surface emitting lasers; 10 to 15 mum; InGaAs-GaAs; InGaAs-GaAs VCSEL; amorphous GaAs antiguide layer; high refractive index clad; low-temperature deposition; maximum current; quantum wells; stable fundamental transverse mode; stable single-mode emission; transverse mode characteristics; two-dimensional finite difference beam propagation method; vertical-cavity surface-emitting lasers; Amorphous materials; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Mirrors; Optical interconnections; Refractive index; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.631285

Filename

631285