Title :
Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer
Author :
Yoo, Byueng-Su ; Chu, Hye Yong ; Park, Hyo-Hoon ; Lee, Hae Gwon ; Lee, Jaejin
Author_Institution :
Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
10/1/1997 12:00:00 AM
Abstract :
We report the transverse mode characteristics of InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSEL´s) buried in a low-temperature-deposited amorphous GaAs (a-GaAs) layer. The maximum current maintaining a stable fundamental transverse mode is increased by the antiguide effect of the a-GaAs clad with a high refractive index. For 10- and 15-μm-diameter devices, we attain a stable single-mode emission over a wide range of current. The antiguide effects and transverse mode profiles in vertical cavity lasers buried in the high refractive index clad are calculated using a two-dimensional beam propagation method
Keywords :
III-V semiconductors; amorphous semiconductors; buried layers; claddings; finite difference methods; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; refractive index; surface emitting lasers; 10 to 15 mum; InGaAs-GaAs; InGaAs-GaAs VCSEL; amorphous GaAs antiguide layer; high refractive index clad; low-temperature deposition; maximum current; quantum wells; stable fundamental transverse mode; stable single-mode emission; transverse mode characteristics; two-dimensional finite difference beam propagation method; vertical-cavity surface-emitting lasers; Amorphous materials; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Mirrors; Optical interconnections; Refractive index; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
