DocumentCode :
1297703
Title :
Protection of Memories Suffering MCUs Through the Selection of the Optimal Interleaving Distance
Author :
Reviriego, Pedro ; Maestro, Juan Antonio ; Baeg, Sanghyeon ; Wen, ShiJie ; Wong, Richard
Author_Institution :
Univ. Antonio de Nebrija, Madrid, Spain
Volume :
57
Issue :
4
fYear :
2010
Firstpage :
2124
Lastpage :
2128
Abstract :
Interleaving, together with single error correction codes (SEC), are common techniques to protect memories against multiple cell upsets (MCUs). This kind of errors is increasingly important as technology scales, becoming a prominent effect, and therefore greatly affecting the reliability of memories. Ideally, the interleaving distance (ID) should be chosen as the maximum expected MCU size. In this way, all errors in an MCU would occur in different logical words, thus being correctable by the SEC codes. However, the use of large interleaving distances usually results in an area increase and a more complex design of memories. In this paper, the selection of the optimal interleaving distance is explored, keeping the area overhead and complexity as low as possible, without compromising memory reliability.
Keywords :
digital storage; error correction codes; integrated circuit design; interleaved storage; SEC code; complex memory design; error correction code; maximum expected MCU size; memories suffering mcu; multiple cell upset; optimal interleaving distance; Alpha particles; Approximation methods; CMOS technology; Error analysis; Error correction; Error correction codes; Integrated circuit packaging; Interleaved codes; Mathematical model; Memory management; Neutrons; Protection; Random access memory; Reliability; Terrestrial atmosphere; Interleaving distance; memory; multiple cell upsets (MCUs); soft error;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2042818
Filename :
5550430
Link To Document :
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