DocumentCode :
1297738
Title :
An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10-Gb/s optical transmission systems
Author :
Miyashita, Miyo ; Yoshida, Naohito ; Kojima, Yoshiki ; Kitano, Toshiaki ; Higashisaka, Norio ; Nakagawa, Junichi ; Takagi, Tadashi ; Otsubo, Mutsuyuki
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
45
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
1058
Lastpage :
1064
Abstract :
An optical modulator driver integrated circuit (IC) has been developed for 10-Gb/s optical communication systems. To achieve both high-frequency (HF) operation and low power dissipation, 0.2-μm T-shaped gate AlGaAs/InGaAs pseudomorphic high electron-mobility transistors (HEMTs) have been employed for their large transconductance gm of 610 mS/mm and high cutoff frequency fT of 67.5 GHz. In addition, optimizing input logic swing, switching transistor size in the output driver, and using cascode-current mirror circuits with small output conductance enable power dissipation as low as 1 W to be achieved at a 10-Gb/s nonreturn-to-zero (NRZ) signal output with 3 Vp.p. This is the lowest value ever reported for power dissipation. As an additional function, the output-voltage swing can be controlled in the range from 2 to 3.3 Vp.p. by the current mirror circuit for the purpose of adjusting the optical-output-signal duty factor through an optical modulator
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; driver circuits; gallium arsenide; indium compounds; optical communication equipment; optical modulation; 0.2 micron; 1 W; 10 Gbit/s; 2 to 3 V; 67.5 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC; NRZ signal; T-shaped gate; cascode-current mirror circuit; cutoff frequency; high-frequency operation; input logic swing; optical communication system; optical modulator driver integrated circuit; optical-output-signal duty factor; output-voltage swing; power dissipation; transconductance; Driver circuits; HEMTs; Indium gallium arsenide; Integrated optics; Mirrors; Optical fiber communication; Optical modulation; PHEMTs; Photonic integrated circuits; Power dissipation;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.598441
Filename :
598441
Link To Document :
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