Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Author

Dickmann, J. ; Daembkes, Heinrich ; Nickel, H. ; Schlapp, W. ; Lösch, R.

Author_Institution

Diamler Benz AG Res. Center, Ulm, Germany

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

327

Lastpage

328

Abstract

AlGaAs/InGaAs/AlGaAs double-side planar-doped (DSPD) pseudomorphic MODFETs of 0.3- mu m gate length with both excellent DC and RF performances are reported. A maximum unilateral gain cutoff frequency of 170 GHz and a maximum current gain cutoff frequency of 60 GHz are achieved. The devices exhibit a maximum transconductance of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This current density is the highest ever reported with this type of layer structure.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; solid-state microwave devices; 0.3 micron; 170 GHz; 60 GHz; AlGaAs-InGaAs-AlGaAs; DC performance; DSPD; HEMT; MBE; RF performances; current density; current gain cutoff frequency; double-side planar-doped; gate length; pseudomorphic MODFETs; semiconductors; transconductance; unilateral gain cutoff frequency; Current density; Cutoff frequency; Doping; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Nickel; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82076

Filename

82076