High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

Author

Wang, Guan-Wu ; Pierson, R.L. ; Asbeck, Peter M. ; Wang, Keh-Chung ; Wang, Nan-Lei ; Nubling, R. ; Chang, M.F. ; Salerno, Jack ; Sastry, S.

Author_Institution

Rockwell Int. Corp., Thousand Oaks, CA, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

347

Lastpage

349

Abstract

Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.<>

Keywords

III-V semiconductors; aluminium compounds; carbon; chemical vapour deposition; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 20.4 GHz; 76 to 102 GHz; AlGaAs-GaAs; GaAs:C base; HBTs; MOCVD-grown; base doping; current gain; current-gain cutoff frequency; heterojunction bipolar transistors; maximum frequency of oscillation; metalorganic chemical vapor deposition; microwave performance; semiconductors; static divide-by-four divider; Carbon dioxide; Chemical vapor deposition; Cutoff frequency; Doping; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Microwave circuits; Molecular beam epitaxial growth; Zinc;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82083

Filename

82083