• DocumentCode
    1297868
  • Title

    Effect of paramagnetic impurities on frequency of sapphire-loaded superconducting cavity resonators

  • Author

    Jones, Stephen K. ; Blair, D.G. ; Buckingham, M.J.

  • Author_Institution
    Dept. of Phys., Western Australia Univ., Nedlands, WA
  • Volume
    24
  • Issue
    6
  • fYear
    1988
  • fDate
    3/17/1988 12:00:00 AM
  • Firstpage
    346
  • Lastpage
    347
  • Abstract
    Dielectric loaded microwave cavities show great promise as high Q, highly stable frequency determining elements in microwave oscillators. The frequency of a sapphire loaded superconducting cavity has a temperature dependence displaying a turning point at approximately 6 K. The authors show how this phenomenon can be explained in terms of the superconducting surface reactance and a low level of paramagnetic ion impurity in the sapphire
  • Keywords
    cavity resonators; microwave devices; microwave oscillators; sapphire; superconducting devices; 6 K; Al2O3; cavity resonators; dielectric loaded microwave cavities; frequency; low level ion impurity; microwave oscillator application; paramagnetic impurities; sapphire loaded superconducting cavity; stable frequency determining elements; superconducting surface reactance; temperature dependence; turning point;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1297868