Monolithic mode locking of long cavity GaAs-AlGaAs semiconductor lasers

Author

May, P.G. ; Bierbaum, M.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

296

Lastpage

298

Abstract

A description is presented of active and hybrid mode locking of long 0.85- mu m monolithic semiconductor lasers. Active mode locking at 8.6 GHz is achieved by applying an RF modulation (with or without positive bias) to a short section of the cavity through a separate contact. By reverse biasing the contact and applying the RF modulation, hybrid mode locking is achieved, and in this case pulses of 16 ps duration are measured by a streak camera; although with some chirp, as indicated by a time-bandwidth product of 2.7. Partial passive mode locking is also achieved by application of a reverse bias to the split contact.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; laser cavity resonators; laser mode locking; semiconductor junction lasers; 0.85 micron; 16 ps; 8.6 GHz; RF modulation; active mode locking; chirp; hybrid mode locking; long cavity GaAs-AlGaAs semiconductor lasers; monolithic mode locking; pulses; reverse biasing; split contact; streak camera; time-bandwidth product; Bandwidth; Chirp modulation; Clocks; Contacts; High speed optical techniques; Laser mode locking; Optical pulses; Optical receivers; Radio frequency; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82091

Filename

82091