Title :
Low-voltage superlattice asymmetric Fabry-Perot reflection modulator
Author :
Law, K.-K. ; Coldren, L.A. ; Merz, J.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
A normally off transverse superlattice asymmetric Fabry-Perot modulator that has a contrast ratio of more than 26:1 at the Fabry-Perot resonance, and a reflection change of 33% at a wavelength of approximately 20 degrees AA away from Fabry-Perot mode for an operating voltage swing of <3 V is discussed. The structure contains an active region of 52 periods of a 30 AA GaAs-30 AA Al/sub 0.3/Ga/sub 0.7/As superlattice, embedded between top and bottom quarter-wave grating mirrors. The modulation is achieved by reducing the cavity loss at the Fabry-Perot resonance through the field-induced effective absorption edge blue-shift in the superlattice.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; light reflection; optical modulation; semiconductor superlattices; 30 AA; Fabry-Perot resonance; GaAs-Al/sub 0.3/Ga/sub 0.7/As; cavity loss; contrast ratio; field-induced effective absorption edge blue-shift; operating voltage swing; quarter-wave grating mirrors; reflection change; semiconductor; superlattice asymmetric Fabry-Perot reflection modulator; Absorption; Fabry-Perot; Mirrors; Optical interconnections; Optical modulation; Optical reflection; Reflectivity; Resonance; Superlattices; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
