Title :
Low-voltage high-gain resonant-cavity avalanche photodiode
Author :
Kuchibhotla, Ravi ; Srinivasan, Anand ; Campbell, Joe C. ; Lei, Chun ; Deppe, Dennis G. ; He, Yue Song ; Streetman, Ben G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
For p-i-n photodiodes and avalanche photodiodes (APDs) in the low-gain regime, there is a performance tradeoff between the transit-time contribution to the bandwidth and the quantum efficiency. A new photodetector structure is demonstrated that alleviates limitations imposed by this tradeoff. This structure utilizes a thin ( approximately=900 AA) depleted absorbing layer to reduce the transit time and achieve avalanche gain at low bias voltage (V/sub b/ approximately=9 V). The external quantum efficiency has been enhanced ( eta /sub e/>49%) by incorporating the structure into a resonant cavity.<>
Keywords :
avalanche photodiodes; 49 percent; 9 V; avalanche gain; bandwidth; depleted absorbing layer; external quantum efficiency; high-gain resonant-cavity avalanche photodiode; light absorption; low bias voltage; low-voltage photodiodes; p-i-n photodiodes; photodetector structure; quantum efficiency; transit-time contribution; Absorption; Avalanche photodiodes; Bandwidth; Gallium arsenide; Low voltage; Optical attenuators; Optical sensors; PIN photodiodes; Photodetectors; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
