Title :
Noise suppression characteristics of InP-based monolithically integrated guided wave balanced photodiodes
Author :
Pamulapati, J. ; Bhattacharya, P.K. ; Biswas, D. ; McCleer, P.J. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Measurements were made of the noise suppression and signal enhancement properties of dual In/sub 0.53/Ga/sub 0.47/As-InP metal-semiconductor-metal (MSM) photodiodes integrated with a leaky mode In/sub 0.52/Al/sub 0.48/As waveguide directional coupler, and an electro-optic phase shifter. The experiments were done with a 1.3- mu m laser as the local oscillator. A noise suppression of 11 dB and signal enhancement of 1.3 dB were recorded for the MSM photodiodes.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; integrated optics; metal-semiconductor-metal structures; photodiodes; 1.3 micron; In/sub 0.52/Al/sub 0.48/As; In/sub 0.53/Ga/sub 0.47/As-InP; InP-based monolithically integrated guided wave balanced photodiodes; MSM photodiodes; electro-optic phase shifter; leaky mode In/sub 0.52/Al/sub 0.48/As waveguide directional coupler; local oscillator; metal-semiconductor-metal; noise suppression; semiconductors; signal enhancement; Directional couplers; Laser modes; Laser noise; Lasers and electrooptics; Noise measurement; Phase measurement; Phase noise; Phase shifters; Photodiodes; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
