Title :
A 10 Gb/s high sensitivity optical receiver using an InGaAs-InAlAs superlattice APD at 1.3 mu m/1.5 mu m
Author :
Miyamoto, Yutaka ; Hagimoto, Kazuo ; Kagawa, Toshiaki
Author_Institution :
NTT Transmission Syst. Lab., Kanagawa, Japan
fDate :
4/1/1991 12:00:00 AM
Abstract :
A description is given of the high-speed low-noise operation of an optical receiver using an InGaAs-InAlAs superlattice avalanche photodiode (SL-APD) that has high sensitivity at 1.3 mu m/1.5 mu m wavelength. A minimum detectable power of -24.0 dBm is obtained at a bit rate of 10 Gb/s. This is the best sensitivity ever reported at 10 Gb/s from APDs.<>
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; receivers; semiconductor superlattices; sensitivity; 1.3 micron; 1.5 micron; 10 Gbit/s; InGaAs-InAlAs; high sensitivity optical receiver; high-speed low-noise operation; semiconductors; superlattice avalanche photodiode; Circuit noise; HEMTs; High speed optical techniques; Optical noise; Optical receivers; Optical sensors; Optical superlattices; Preamplifiers; Signal to noise ratio; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
