Title :
Laser SEL Sensitivity Mapping of SRAM Cells
Author :
Burnell, Andrew J. ; Chugg, Andrew Michael ; Harboe-Sørensen, R.
Author_Institution :
Radiat. Effects Group, MBDA UK Ltd., Bristol, UK
Abstract :
It is shown that laser SEL sensitivity mapping at the cell level exhibits a repetitive pattern. In conjunction with depth profiling, individual sensitive regions are shown to be approximate ellipsoids, which has implications for SEL specifications in the space environment.
Keywords :
SRAM chips; SEL specification; SRAM cells; approximate ellipsoids; depth profiling; laser SEL sensitivity mapping; repetitive pattern; space environment; Absorption; Aluminum; CMOS technology; Isolation technology; Laser theory; Metallization; Mirrors; Optical pulses; Radiation effects; Random access memory; Sensitivity; Single event upset; Testing; Thyristors; SRAM; Single event effects (SEE); single event latch-up (SEL); single event upset (SEU); test facilities;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2039146
