• DocumentCode
    1298063
  • Title

    Laser SEL Sensitivity Mapping of SRAM Cells

  • Author

    Burnell, Andrew J. ; Chugg, Andrew Michael ; Harboe-Sørensen, R.

  • Author_Institution
    Radiat. Effects Group, MBDA UK Ltd., Bristol, UK
  • Volume
    57
  • Issue
    4
  • fYear
    2010
  • Firstpage
    1973
  • Lastpage
    1977
  • Abstract
    It is shown that laser SEL sensitivity mapping at the cell level exhibits a repetitive pattern. In conjunction with depth profiling, individual sensitive regions are shown to be approximate ellipsoids, which has implications for SEL specifications in the space environment.
  • Keywords
    SRAM chips; SEL specification; SRAM cells; approximate ellipsoids; depth profiling; laser SEL sensitivity mapping; repetitive pattern; space environment; Absorption; Aluminum; CMOS technology; Isolation technology; Laser theory; Metallization; Mirrors; Optical pulses; Radiation effects; Random access memory; Sensitivity; Single event upset; Testing; Thyristors; SRAM; Single event effects (SEE); single event latch-up (SEL); single event upset (SEU); test facilities;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2039146
  • Filename
    5550485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1298063