Title :
Current and Future Challenges in Radiation Effects on CMOS Electronics
Author :
Dodd, P.E. ; Shaneyfelt, M.R. ; Schwa, J.R. ; Felix, J.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Advances in microelectronics performance and density continue to be fueled by the engine of Moore´s law. Although lately this engine appears to be running out of steam, recent developments in advanced technologies have brought about a number of challenges and opportunities for their use in radiation environments. For example, while many advanced CMOS technologies have generally shown improving total dose tolerance, single-event effects continue to be a serious concern for highly scaled technologies. In this paper, we examine the impact of recent developments and the challenges they present to the radiation effects community. Topics covered include the impact of technology scaling on radiation response and technology challenges for both total dose and single-event effects. We include challenges for hardening and mitigation techniques at the nanometer scale. Recent developments leading to hardness assurance challenges are covered. Finally, we discuss future radiation effects challenges as the electronics industry looks beyond Moore´s law to alternatives to traditional CMOS technologies.
Keywords :
CMOS integrated circuits; integrated circuit reliability; radiation hardening (electronics); CMOS electronics; Moore law; advanced CMOS technologies; hardening technique; highly scaled technologies; microelectronics performance; mitigation technique; radiation effects; single-event effects; total dose tolerance; CMOS integrated circuits; CMOS technology; Computers; Costs; Engines; Foundries; Integrated circuit technology; Ionizing radiation; Microelectronics; Moore´s Law; Radiation effects; Radiation hardening; Random access memory; Semiconductor device manufacture; Transistors; Integrated circuit radiation effects; integrated circuit reliability; radiation effects; radiation effects technology trends; radiation hardening (electronics); radiation hardness assurance; radiation hardness assurance methodology; radiation hardness assurance testing; single event effects; single-event functional interrupt; single-event upset; soft errors; total ionizing dose effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2042613