• DocumentCode
    1298076
  • Title

    Current and Future Challenges in Radiation Effects on CMOS Electronics

  • Author

    Dodd, P.E. ; Shaneyfelt, M.R. ; Schwa, J.R. ; Felix, J.A.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    57
  • Issue
    4
  • fYear
    2010
  • Firstpage
    1747
  • Lastpage
    1763
  • Abstract
    Advances in microelectronics performance and density continue to be fueled by the engine of Moore´s law. Although lately this engine appears to be running out of steam, recent developments in advanced technologies have brought about a number of challenges and opportunities for their use in radiation environments. For example, while many advanced CMOS technologies have generally shown improving total dose tolerance, single-event effects continue to be a serious concern for highly scaled technologies. In this paper, we examine the impact of recent developments and the challenges they present to the radiation effects community. Topics covered include the impact of technology scaling on radiation response and technology challenges for both total dose and single-event effects. We include challenges for hardening and mitigation techniques at the nanometer scale. Recent developments leading to hardness assurance challenges are covered. Finally, we discuss future radiation effects challenges as the electronics industry looks beyond Moore´s law to alternatives to traditional CMOS technologies.
  • Keywords
    CMOS integrated circuits; integrated circuit reliability; radiation hardening (electronics); CMOS electronics; Moore law; advanced CMOS technologies; hardening technique; highly scaled technologies; microelectronics performance; mitigation technique; radiation effects; single-event effects; total dose tolerance; CMOS integrated circuits; CMOS technology; Computers; Costs; Engines; Foundries; Integrated circuit technology; Ionizing radiation; Microelectronics; Moore´s Law; Radiation effects; Radiation hardening; Random access memory; Semiconductor device manufacture; Transistors; Integrated circuit radiation effects; integrated circuit reliability; radiation effects; radiation effects technology trends; radiation hardening (electronics); radiation hardness assurance; radiation hardness assurance methodology; radiation hardness assurance testing; single event effects; single-event functional interrupt; single-event upset; soft errors; total ionizing dose effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2042613
  • Filename
    5550487