Title :
Front-End Performance and Charge Collection Properties of Heavily Irradiated DNW MAPS
Author :
Ratti, Lodovico ; Manghisoni, Massimo ; Re, Valerio ; Traversi, Gianluca ; Zucca, Stefano ; Bettarini, Stefano ; Morsani, Fabio ; Rizzo, Giuliana
Author_Institution :
Dipt. di Elettron., Univ. degli Studi di Pavia, Pavia, Italy
Abstract :
Deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm technology have been exposed to γ-rays up to an integrated dose of about 10 Mrad and subjected to a 100 °C/168 h annealing cycle. Device tolerance to total ionizing dose has been evaluated by monitoring the change in charge sensitivity, noise and charge collection properties after each step of the irradiation and annealing campaign. Damage mechanisms and their relation to front-end architecture and sensor features are thoroughly discussed by comparing the response to ionizing radiation of different test structures and based on radiation induced degradation models in single MOS transistors.
Keywords :
CMOS integrated circuits; analogue integrated circuits; dosimetry; gamma-ray effects; monolithic integrated circuits; nuclear electronics; position sensitive particle detectors; readout electronics; annealing cycle; charge collection properties; charge sensitivity; damage mechanisms; deep N-well CMOS monolithic active pixel sensors; degradation models; device tolerance; front-end architecture; front-end performance; gamma-rays; heavily irradiated deep N-well MAPS; ionizing radiation; noise properties; single MOS transistors; total ionizing dose; Annealing; CMOS technology; Degradation; Detectors; Electrodes; Ionizing radiation; Ionizing radiation sensors; Leakage current; Monitoring; Noise; Radiation effects; Sensitivity; Sensor phenomena and characterization; Testing; Transistors; Analog front-end; CMOS; MAPS; deep N-well; ionizing radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2039003
