Title :
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
Author :
Khan, Muhammad Asad ; Hu, X. ; Sumin, G. ; Lunev, A. ; Yang, J. ; Gaska, R. ; Shur, M.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-μ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET was more than six orders of magnitude smaller than for the HFET.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; leakage currents; semiconductor device reliability; 5 micron; AlGaN-GaN; III-V semiconductors; MOS-HFET; gate leakage current; metal oxide semiconductor heterostructure field effect transistor; source-to-drain opening; Aluminum gallium nitride; Capacitance-voltage characteristics; FETs; Gallium nitride; HEMTs; Insulation; Leakage current; MODFETs; MOSFET circuits; Plasma measurements;
Journal_Title :
Electron Device Letters, IEEE
