Title :
Performance Evaluation of 10-kV SiC Trench Clustered IGBT
Author :
Menon, K.G. ; Nakajima, A. ; Ngwendson, L. ; Narayanan, E. M Sankara
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
The performance of a 10-kV p-channel trench clustered insulated-gate bipolar transistor (IGBT) in silicon carbide evaluated through extensive 2-D numerical simulations is reported here for the first time. Comparison with an equivalent trench IGBT reveals a reduction in the following: 1) on -state voltage by more than 30%; 2) differential specific on-resistance by 20%; and 3) total ( on-state and turnoff) losses by more than 25%.
Keywords :
insulated gate bipolar transistors; numerical analysis; power semiconductor devices; silicon compounds; wide band gap semiconductors; 2D numerical simulations; SiC; insulated-gate bipolar transistor; performance evaluation; silicon carbide; trench clustered IGBT; voltage 10 kV; Anodes; Electric potential; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Silicon; Silicon carbide; Clustered Insulated-Gate Bipolar Transistor IGBT CIGBT; IGBTs; power semiconductor devices; silicon carbide (SiC); wide bandgap;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2160144
