• DocumentCode
    1298382
  • Title

    Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

  • Author

    Ozbek, A.M. ; Baliga, B. Jayant

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    32
  • Issue
    10
  • fYear
    2011
  • Firstpage
    1361
  • Lastpage
    1363
  • Abstract
    In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 μm.
  • Keywords
    Schottky diodes; ion implantation; rectifiers; Schottky barrier diodes; argon ion implantation; finite termination; finite-zone argon implant edge termination; high-voltage Schottky rectifiers; implant region width; plane parallel breakdown voltage; size 50 mum; voltage 1700 V; Argon; Gallium nitride; Implants; Leakage current; Schottky barriers; Schottky diodes; Breakdown voltage; Schottky diode; edge termination; gallium nitride (GaN);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2162221
  • Filename
    5985473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1298382