Title :
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
Author :
Ozbek, A.M. ; Baliga, B. Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 μm.
Keywords :
Schottky diodes; ion implantation; rectifiers; Schottky barrier diodes; argon ion implantation; finite termination; finite-zone argon implant edge termination; high-voltage Schottky rectifiers; implant region width; plane parallel breakdown voltage; size 50 mum; voltage 1700 V; Argon; Gallium nitride; Implants; Leakage current; Schottky barriers; Schottky diodes; Breakdown voltage; Schottky diode; edge termination; gallium nitride (GaN);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2162221
