Title :
A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology
Author :
Knapp, Herbert ; Wilhelm, Wilhelm ; Wurzer, Martin
Author_Institution :
Corp. Res. Dept., Infineon Technol. AG, Munich, Germany
fDate :
2/1/2000 12:00:00 AM
Abstract :
In this paper, we present a low-power static frequency divider with a divide ratio of eight. It operates up to 15 GHz, consuming only 22 mA from a 3.6-V supply. The chip is manufactured in a 0.8-μm silicon bipolar production technology with a cutoff frequency of 25 GHz. The circuit has a single-ended input and output and is mounted in a six-pin SOT363 plastic package
Keywords :
MMIC frequency convertors; bipolar MMIC; elemental semiconductors; frequency dividers; low-power electronics; silicon; 0.8 micron; 15 GHz; 22 mA; 25 GHz; 3.6 V; SOT363 plastic package; Si; bipolar technology; cutoff frequency; divide ratio; low-power electronics; production technology; single-ended input; single-ended output; static frequency divider; Frequency conversion; Frequency synthesizers; Integrated circuit technology; Manufacturing; Mass production; Phase locked loops; Phase noise; Silicon; Solid state circuits; Voltage-controlled oscillators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
