DocumentCode
1298619
Title
A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology
Author
Knapp, Herbert ; Wilhelm, Wilhelm ; Wurzer, Martin
Author_Institution
Corp. Res. Dept., Infineon Technol. AG, Munich, Germany
Volume
48
Issue
2
fYear
2000
fDate
2/1/2000 12:00:00 AM
Firstpage
205
Lastpage
208
Abstract
In this paper, we present a low-power static frequency divider with a divide ratio of eight. It operates up to 15 GHz, consuming only 22 mA from a 3.6-V supply. The chip is manufactured in a 0.8-μm silicon bipolar production technology with a cutoff frequency of 25 GHz. The circuit has a single-ended input and output and is mounted in a six-pin SOT363 plastic package
Keywords
MMIC frequency convertors; bipolar MMIC; elemental semiconductors; frequency dividers; low-power electronics; silicon; 0.8 micron; 15 GHz; 22 mA; 25 GHz; 3.6 V; SOT363 plastic package; Si; bipolar technology; cutoff frequency; divide ratio; low-power electronics; production technology; single-ended input; single-ended output; static frequency divider; Frequency conversion; Frequency synthesizers; Integrated circuit technology; Manufacturing; Mass production; Phase locked loops; Phase noise; Silicon; Solid state circuits; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.821762
Filename
821762
Link To Document