DocumentCode :
129862
Title :
Low jitter FBAR based chip scale precision oscillator
Author :
Sridaran, Suresh ; Fouquet, Julie ; Parker, Reed ; Small, Martha ; Ortiz, S. ; Bi, Frank ; Gilbert, Stephen R. ; Callaghan, Lori ; Ruby, Rich
Author_Institution :
Wireless Semicond. Div., Avago Technol., San Jose, CA, USA
fYear :
2014
fDate :
3-6 Sept. 2014
Firstpage :
85
Lastpage :
88
Abstract :
We present a FBAR oscillator that operates at 628MHz, achieves low jitter <;50fs and good frequency stability all while fitting in a small package of 1.1 × 0.9 × 0.25 mm3. The chip-scale oscillator employs a feedback circuitry in the encapsulating lid of a FBAR resonator and makes use of a differential Colpitts oscillator design fabricated in 0.6μm CMOS technology. To achieve the frequency precision required for a reference oscillator, we demonstrate the ability to tune the oscillator over 700ppm using a switched capacitor scheme to compensate for manufacturing tolerances. For achieving frequency stability over temperature and packaging stress, the FBAR resonators used in these oscillators employ silicon dioxide layer temperature compensation and a stress relieved structure respectively. The measured integrated jitter (12kHz to 20MHz) for the oscillators with a supply voltage of 3.3V across a wafer is 33fs with a far from carrier phase noise of -170dBc/Hz .The median current draw from the supply is 16.5mA and the output power measured at a 50ohm load using a balun is 0dBm.These oscillators are suitable for co-integration as reference clocks in high speed communication ICs where size and performance are paramount.
Keywords :
CMOS integrated circuits; acoustic resonators; bulk acoustic wave devices; jitter; switched capacitor networks; thin film circuits; CMOS technology; FBAR based precision oscillator; FBAR resonator; chip scale precision oscillator; current 16.5 mA; differential Colpitts oscillator design; feedback circuitry; frequency 12 MHz to 20 MHz; frequency 628 MHz; frequency precision; frequency stability; integrated jitter; low jitter precision oscillator; median current draw; reference oscillator; resistance 50 ohm; silicon dioxide layer temperature compensation; size 0.25 mm; size 0.9 mm; size 1.1 mm; stress relieved structure; switched capacitor scheme; time 33 fs; voltage 3.3 V; Film bulk acoustic resonators; Jitter; Phase noise; Resonant frequency; Stress; Temperature measurement; BAW; FBAR; chip-scale packaged oscillator; frequency reference; high Q resonator; zero drift resonator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2014 IEEE International
Conference_Location :
Chicago, IL
Type :
conf
DOI :
10.1109/ULTSYM.2014.0022
Filename :
6932321
Link To Document :
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