A plastic package GaAs MESFET 5.8-GHz receiver front-end with on-chip matching for ETC system

Author

Low, Eng Chuan ; Yan, Kelvin ; Nakamura, H. ; Fujishiro, Hiroki I.

Author_Institution

Inst. of Microelectron., Singapore

Volume

48

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

209

Lastpage

213

Abstract

A plastic package GaAs MESFET receiver front-end monolithic microwave integrated circuit operating at 5.8 GHz is presented in this paper. It has a two-stage low-noise amplifier followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, a conversion gain of 20.4 dB, noise figure of 4.1 dB, and high port-to-port isolations have been achieved. Total chip size of 1.0×0.9 mm² has been achieved through on-chip matching for both RF and local-oscillator ports and the use of simple two-element matching networks for all interstage matching. The 3-dB bandwidth of conversion gain is 1 GHz

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; MMIC mixers; cascade networks; field effect MMIC; gallium arsenide; impedance matching; integrated circuit design; integrated circuit packaging; plastic packaging; 1 GHz; 20.4 dB; 3 V; 3-dB bandwidth; 4.1 dB; 5.8 GHz; 8.3 mA; ETC system; GaAs; III-V semiconductors; MESFET receiver front-end; chip size; conversion gain; dual-gate mixer; electronic toll collection; interstage matching; monolithic microwave integrated circuit; on-chip matching; plastic package; port-to-port isolations; two-element matching networks; two-stage low-noise amplifier; Gain; Gallium arsenide; Low-noise amplifiers; MESFET integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Plastic integrated circuit packaging; Plastic packaging;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.821763

Filename

821763