DocumentCode
1298658
Title
Longer MEMS Switch Lifetime Using Novel Dual-Pulse Actuation Voltage
Author
Wong, Wallace S H ; Lai, Chean Hung
Author_Institution
Univ. of Technol. (Sarawak Campus), Kuching, Malaysia
Volume
9
Issue
4
fYear
2009
Firstpage
569
Lastpage
575
Abstract
A novel dual-pulse (NDP) actuation voltage has been proposed to reduce dielectric charging in microelectromechanical system (MEMS) switches, leading to a longer switch lifetime. Mathematical and transient circuit models have been utilized to simulate dielectric charging in the radio-frequency (RF) MEMS switch, enabling the analysis of the charge built up at the switch dielectric and the substrate brought about by the actuation-voltage curve used. The proposed DP actuation signal has shown to improve the lifetime of the RF MEMS switch as it minimizes the charge built up during its long continuous operation. Practical experiment on the commercial TeraVicta TT712-68CSP MEMS switch shows that the proposed actuation voltage can reduce the pull-in/pull-out voltage shift and therefore prolong the switch lifetime. The technique has also shown to reduce switching bounces.
Keywords
dielectric materials; electric charge; microswitches; transient analysis; TeraVicta TT712-68CSP; dielectric charging; dual pulse actuation voltage; microelectromechanical system; radiofrequency MEMS switch; transient circuit; Charging; Radio-frequency (RF) microelectromechanical system (MEMS); dielectric; lifetime; reliability;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2009.2030177
Filename
5204230
Link To Document