Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes

Author

Allen, Martin W. ; Weng, Xiaojun ; Redwing, Joan M. ; Sarpatwari, Karthik ; Mohney, Suzanne E. ; von Wenckstern, Holger ; Grundmann, Marius ; Durbin, Steven M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Canterbury, Christchurch, New Zealand

Volume

56

Issue

9

fYear

2009

Firstpage

2160

Lastpage

2164

Abstract

The current-voltage characteristics of low-ideality factor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 times 10¹⁴ cm^-3) hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 plusmn 6 Amiddotcm^-2middotK^-2, close to the theoretical value of 32 Amiddotcm^-2middotK^-2, and two orders of magnitude larger than previously reported values.

Keywords

II-VI semiconductors; Schottky diodes; carrier density; crystal growth from solution; thermionic emission; zinc compounds; ZnO; carrier concentration; current transport; current-voltage characteristics; experimental Richardson constant; hydrothermally grown bulk single crystal wafer; ideal Schottky diodes; low-ideality factor; planar geometry devices; temperature 40 K to 423 K; thermionic emission; Geometry; Schottky barriers; Schottky diodes; Semiconductor diodes; Tellurium; Temperature distribution; Thermionic emission; Thin film transistors; Zinc compounds; Zinc oxide; Richardson constant; Schottky barriers; Schottky diodes; zinc compounds; zinc oxide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2026393

Filename

5204241