Title :
Monolithically integrated 16-channel 1.55 μm pin/HBT photoreceiver array with 11.5 GHz bandwidth
Author :
Yang, Kun ; Zhang, Xiaobing ; Haddad, G.I. ; Bhattacharya, Pallab
fDate :
1/2/1997 12:00:00 AM
Abstract :
A 16-channel InP-based (λ=1.55 μm) monolithically integrated photoreceiver array is realised with an average channel bandwidth of 11.5 GHz and adjacent channel crosstalk of <-35 dB with both dual bias design and the incorporation of metal shields
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical crosstalk; optical receivers; p-i-n photodiodes; wavelength division multiplexing; 1.55 micron; 11.5 GHz; 16-channel configuration; InP; OEIC; PIN/HBT photoreceiver array; WDM applications; adjacent channel crosstalk; channel bandwidth; dual bias design; metal shields; monolithically integrated photoreceiver array;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970029
