Title :
Temperature Dependency of Charge Sharing and MBU Sensitivity in 130-nm CMOS Technology
Author :
Liu, Biwei ; Chen, Shuming ; Liang, Bin ; Liu, Zheng ; Zhao, Zhenyu
Author_Institution :
Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
This paper investigates the temperature dependency of charge sharing in 130-nm CMOS technology over a temperature range of 200 to 420 K. TCAD simulation results show the charge sharing collection increases significantly with temperature rising, which is 65% ~ 317%. The LETth of MBU in two SRAM cells is also quantified. The result reveals that the upset LETth of the passive cell decreases in the whole temperature range, which is different from the parabolic relationship of single-event upset´s temperature dependency.
Keywords :
CMOS integrated circuits; SRAM chips; CMOS technology; SRAM cells; TCAD simulation; charge sharing collection; multiple-bit upset sensitivity; passive cell; single-event upset temperature dependency; temperature 200 K to 420 K; CMOS technology; Integrated circuit technology; MOS devices; Paper technology; Random access memory; Single event upset; Space technology; Temperature dependence; Temperature distribution; Temperature sensors; Charge sharing; multiple-bit upset (MBU); parasitic bipolar; temperature dependency;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2022267
