Title :
Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
Author :
Driad, Rachid ; Desrousseaux, P. ; Duchenois, A.M. ; Alexandre, F. ; Launay, P.
Author_Institution :
Lab. de Bagneux, France Telecom/CNET-PAB, Bagneux
fDate :
1/2/1997 12:00:00 AM
Abstract :
A fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE) regrowth of both the extrinsic base and subcollector layers is reported. Using this technology, cutoff frequencies of 50 and 70 GHz for fT and fmax, respectively, have been achieved for In0.49Ga0.51P/GaAs HBTs with 9×4 μm2 emitter-base junction area. High speed integrated circuits for lightwave communications including a 10 Gbit/s decision circuit and an 18 GHz dynamic frequency divider were successfully fabricated using these planar HBTs
Keywords :
III-V semiconductors; bipolar MMIC; bipolar digital integrated circuits; chemical beam epitaxial growth; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave bipolar transistors; optical communication equipment; 10 Gbit/s; 18 GHz; 50 GHz; 70 GHz; CBE regrowth; In0.49Ga0.51P-GaAs; OEIC; decision circuit; dynamic frequency divider; extrinsic base layers; high speed integrated circuits; lightwave communications; optoelectronic circuit applications; planar InGaP/GaAs HBTs; selective chemical beam epitaxial; self-aligned HBT fabrication process; subcollector layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970015
