Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications

Author

Driad, Rachid ; Desrousseaux, P. ; Duchenois, A.M. ; Alexandre, F. ; Launay, P.

Author_Institution

Lab. de Bagneux, France Telecom/CNET-PAB, Bagneux

Volume

33

Issue

1

fYear

1997

fDate

1/2/1997 12:00:00 AM

Firstpage

85

Lastpage

86

Abstract

A fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE) regrowth of both the extrinsic base and subcollector layers is reported. Using this technology, cutoff frequencies of 50 and 70 GHz for f_T and f_max, respectively, have been achieved for In_0.49Ga_0.51P/GaAs HBTs with 9×4 μm² emitter-base junction area. High speed integrated circuits for lightwave communications including a 10 Gbit/s decision circuit and an 18 GHz dynamic frequency divider were successfully fabricated using these planar HBTs

Keywords

III-V semiconductors; bipolar MMIC; bipolar digital integrated circuits; chemical beam epitaxial growth; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave bipolar transistors; optical communication equipment; 10 Gbit/s; 18 GHz; 50 GHz; 70 GHz; CBE regrowth; In_0.49Ga_0.51P-GaAs; OEIC; decision circuit; dynamic frequency divider; extrinsic base layers; high speed integrated circuits; lightwave communications; optoelectronic circuit applications; planar InGaP/GaAs HBTs; selective chemical beam epitaxial; self-aligned HBT fabrication process; subcollector layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19970015

Filename

555103